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2004-03-30 rev. 2.1 page 1 spp11N60S5, spb11N60S5 spi11N60S5 cool mos? power transistor v ds 600 v r ds(on) 0.38 ? i d 11 a feature ? new revolutionary high voltage technology ? ultra low gate charge ? periodic avalanche rated ? extreme d v /d t rated ? ultra low effective capacitances ? improved transconductance p-to262 p-to220-3-1 p-to263-3-2 2 p - to220 - 3 - 1 2 3 1 type package ordering code spp11N60S5 p-to220-3-1 q67040-s4198 spb11N60S5 p-to263-3-2 q67040-s4199 spi11N60S5 p-to262 q67040-s4338 marking 11N60S5 11N60S5 11N60S5 maximum ratings parameter symbol value unit continuous drain current t c = 25 c t c = 100 c i d 11 7 a pulsed drain current, t p limited by t j ma x i d p uls 22 avalanche energy, single pulse i d = 5.5 a, v dd = 50 v e as 340 mj avalanche energy, repetitive t ar limited by t jmax 1 ) i d = 11 a, v dd = 50 v e ar 0.6 avalanche current, repetitive t ar limited by t j ma x i ar 11 a gate source voltage v gs 20 v gate source voltage ac (f >1hz) v gs 30 power dissipation, t c = 25c p tot 125 w operating and storage temperature t j , t st g -55... +150 c
2004-03-30 rev. 2.1 page 2 spp11N60S5, spb11N60S5 spi11N60S5 maximum ratings parameter symbol value unit drain source voltage slope v ds = 480 v, i d = 11 a, t j = 125 c d v /d t 20 v/ns thermal characteristics parameter symbol values unit min. typ. max. thermal resistance, junction - case r thjc - - 1 k/w thermal resistance, junction - ambient, leaded r thja - - 62 smd version, device on pcb: @ min. footprint @ 6 cm 2 cooling area 2) r thja - - - 35 62 - soldering temperature, 1.6 mm (0.063 in.) from case for 10s t sold - - 260 c electrical characteristics, at t j=25c unless otherwise specified parameter symbol conditions values unit min. typ. max. drain-source breakdown voltage v (br)dss v gs =0v, i d =0.25ma 600 - - v drain-source avalanche breakdown voltage v (br)ds v gs =0v, i d =11a - 700 - gate threshold voltage v gs ( th ) i d =500 ? , v gs = v ds 3.5 4.5 5.5 zero gate voltage drain current i dss v ds =600v, v gs =0v, t j =25c, t j =150c - - - - 25 250 a gate-source leakage current i gss v gs =20v, v ds =0v - - 100 na drain-source on-state resistance r ds(on) v gs =10v, i d =7a, t j =25c t j =150c - - 0.34 0.92 0.38 - ? gate input resistance r g f =1mhz, open drain - 29 -
2004-03-30 rev. 2.1 page 3 spp11N60S5, spb11N60S5 spi11N60S5 electrical characteristics , at t j = 25 c, unless otherwise specified parameter symbol conditions values unit min. typ. max. characteristics transconductance g fs v ds 2* i d * r ds(on)max , i d =7a - 6 - s input capacitance c iss v gs =0v, v ds =25v, f =1mhz - 1460 - pf output capacitance c oss - 610 - reverse transfer capacitance c rss - 21 - effective output capacitance, 3) energy related c o(er) v gs =0v, v ds =0v to 480v - 45 - pf effective output capacitance, 4) time related c o(tr) - 85 - turn-on delay time t d(on) v dd =350v, v gs =0/10v, i d =11a, r g =6.8 ? - 130 - ns rise time t r - 35 - turn-off delay time t d(off) - 150 225 fall time t f - 20 30 gate charge characteristics gate to source charge q gs v dd =350v, i d =11a - 10.5 - nc gate to drain charge q gd - 24 - gate charge total q g v dd =350v, i d =11a, v gs =0 to 10v - 41.5 54 gate plateau voltage v (plateau) v dd =350v, i d =11a - 8 - v 1 repetitve avalanche causes additional power losses that can be calculated as p av = e ar * f . 2 device on 40mm*40mm*1.5mm epoxy pcb fr4 with 6cm2 (one layer, 70 m thick) copper area for drain connection. pcb is vertical without blown air. 3 c o(er) is a fixed capacitance that gives the same stored energy as c oss while v ds is rising from 0 to 80% v dss . 4 c o(tr) is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss .
2004-03-30 rev. 2.1 page 4 spp11N60S5, spb11N60S5 spi11N60S5 electrical characteristics , at t j = 25 c, unless otherwise specified parameter symbol conditions values unit min. typ. max. inverse diode continuous forward current i s t c =25c - - 11 a inverse diode direct current, pulsed i sm - - 22 inverse diode forward voltage v sd v gs =0v, i f = i s - 1 1.2 v reverse recovery time t rr v r =350v, i f = i s , d i f /d t =100a/s - 650 1105 ns reverse recovery charge q rr - 7.9 - c typical transient thermal characteristics symbol value unit symbol value unit typ. typ. thermal resistance r th1 0.015 k/w r th2 0.03 r th3 0.056 r th4 0.197 r th5 0.216 r th6 0.083 thermal capacitance c th1 0.0001878 ws/k c th2 0.0007106 c th3 0.000988 c th4 0.002791 c th5 0.007285 c th6 0.063 external heatsink t j t case t amb c th1 c th2 r th1 r th,n c th,n p tot (t)
2004-03-30 rev. 2.1 page 5 spp11N60S5, spb11N60S5 spi11N60S5 1 power dissipation p tot = f ( t c ) 0 20 40 60 80 100 120 c 160 t c 0 10 20 30 40 50 60 70 80 90 100 110 120 w 140 spp11N60S5 p tot 2 safe operating area i d = f ( v ds ) parameter : d = 0 , t c =25c 10 0 10 1 10 2 10 3 v v ds -2 10 -1 10 0 10 1 10 2 10 a i d tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms dc 3 transient thermal impedance z thjc = f ( t p ) parameter: d = t p / t 10 -7 10 -6 10 -5 10 -4 10 -3 10 -1 s t p -4 10 -3 10 -2 10 -1 10 0 10 1 10 k/w z thjc d = 0.5 d = 0.2 d = 0.1 d = 0.05 d = 0.02 d = 0.01 single pulse 4 typ. output characteristic i d = f ( v ds ); t j =25c parameter: t p = 10 s, v gs 0 5 10 15 v ds 25 v 0 5 10 15 20 25 a 35 i d 6v 7v 8v 9v 20v 12v 10v
2004-03-30 rev. 2.1 page 6 spp11N60S5, spb11N60S5 spi11N60S5 5 typ. output characteristic i d = f ( v ds ); t j =150c parameter: t p = 10 s, v gs 0 5 10 15 v 25 v ds 0 2 4 6 8 10 12 14 a 18 i d 6v 7v 8v 9v 20v 12v 10v 6 typ. drain-source on resistance r ds(on) = f ( i d ) parameter: t j =150c, v gs 0 2 4 6 8 10 12 14 a 18 i d 0 0.5 1 m ? 2 r ds(on) 20v 12v 10v 9v 8v 7v 6v 7 drain-source on-state resistance r ds(on) = f ( t j ) parameter : i d = 7 a, v gs = 10 v -60 -20 20 60 100 c 180 t j 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 ? 2.1 spp11N60S5 r ds(on) typ 98% 8 typ. transfer characteristics i d = f ( v gs ); v ds 2 x i d x r ds(on)max parameter: t p = 10 s 0 4 8 12 v 20 v gs 0 4 8 12 16 20 24 a 32 i d 25 c 150 c
2004-03-30 rev. 2.1 page 7 spp11N60S5, spb11N60S5 spi11N60S5 9 typ. gate charge v gs = f ( q gate ) parameter: i d = 11 a pulsed 0 10 20 30 40 50 nc 65 q gate 0 2 4 6 8 10 12 v 16 spp11N60S5 v gs 0.2 v ds max 0.8 v ds max 10 forward characteristics of body diode i f = f (v sd ) parameter: t j , t p = 10 s 0 0.4 0.8 1.2 1.6 2 2.4 v 3 v sd -1 10 0 10 1 10 2 10 a spp11N60S5 i f t j = 25 c typ t j = 25 c (98%) t j = 150 c typ t j = 150 c (98%) 11 avalanche soa i ar = f ( t ar ) par.: t j 150 c 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 4 s t ar 0 1 2 3 4 5 6 7 8 9 a 11 i ar t j (start) =125c t j (start) =25c 12 avalanche energy e as = f ( t j ) par.: i d = 5.5 a, v dd = 50 v 20 40 60 80 100 120 c 160 t j 0 50 100 150 200 250 mj 350 e as
2004-03-30 rev. 2.1 page 8 spp11N60S5, spb11N60S5 spi11N60S5 13 drain-source breakdown voltage v (br)dss = f ( t j ) -60 -20 20 60 100 c 180 t j 540 560 580 600 620 640 660 680 v 720 spp11N60S5 v (br)dss 14 avalanche power losses p ar = f ( f ) parameter: e ar =0.6mj 10 4 10 5 10 6 hz f 0 50 100 150 200 w 300 p ar 15 typ. capacitances c = f ( v ds ) parameter: v gs =0v, f =1 mhz 0 100 200 300 400 v 600 v ds 0 10 1 10 2 10 3 10 4 10 pf c c iss c oss c rss 16 typ. c oss stored energy e oss = f ( v ds ) 0 100 200 300 400 v 600 v ds 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 j 7.5 e oss
2004-03-30 rev. 2.1 page 9 spp11N60S5, spb11N60S5 spi11N60S5 definition of diodes switching characteristics
2004-03-30 rev. 2.1 page 10 spp11N60S5, spb11N60S5 spi11N60S5 p-to-220-3-1 a b a 0.25 m 2.8 15.38 0.6 2.54 0.75 0.1 0.13 1.27 4.44 b 9.98 0.48 0.05 all metal surfaces tin plated, except area of cut. c 0.2 10 0.4 3.7 c 0.5 0.1 0.9 5.23 13.5 0.5 3x metal surface min. x=7.25, y=12.3 2x 0.2 0.22 1.17 0.2 2.51 p-to-263-3-2 (d 2 -pak)
2004-03-30 rev. 2.1 page 11 spp11N60S5, spb11N60S5 spi11N60S5 p-to-262-3-1 (i 2 -pak) b a 0.25 m typical 2.54 3 x 0.75 0.1 1.05 1.27 b 9.25 0.2 0.05 1) metal surface min. x = 7.25, y = 6.9 c 11.6 0.3 10 0.2 c 2.4 0.5 0.1 0.2 4.55 13.5 0.5 all metal surfaces tin plated, except area of cut. 0.3 1 8.5 1) 2 x 4.4 7.55 1) 0...0.15 0...0.3 2.4 a
2004-03-30 rev. 2.1 page 12 spp11N60S5, spb11N60S5 spi11N60S5 published by infineon technologies ag , bereichs kommunikation st.-martin-strasse 53, d-81541 mnchen ? infineon technologies ag 1999 all rights reserved. attention please! the information herein is given to describe certain components and shall not be considered as warranted characteristics. terms of delivery and rights to technical change reserved. we hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. infineon technologies is an approved cecc manufacturer. information for further information on technology, delivery terms and conditions and prices please contact your nearest infineon technologies office in germany or our infineon technologies reprensatives worldwide (see address list). warnings due to technical requirements components may contain dangerous substances. for information on the types in question please contact your nearest infineon technologies office. infineon technologies components may only be used in life-support devices or systems with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

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